| PART |
Description |
Maker |
| ML7XX12 ML785B12 |
InGaAsP-MQW-FP LASER DIODES ARRATS
InGaAsP - MQW - FP LASER DIODE ARRAYS
|
Mitsubishi Electric Corporation
|
| NX5317 |
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
1 310nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
|
California Eastern Labs
|
| KLT-255544 |
1550nm InGaAsP strained MQW DFB-LD
|
KODENSHI KOREA CORP.
|
| ML976H11F |
InGaAsP - MQW -DFB LASER DIODES
|
Mitsubishi Electric Corporation
|
| NX6514EH NX6514EH-AZ |
1 550 nm InGaAsP MQW-DFB LASER DIODE
|
California Eastern Labs
|
| KLT-255444 |
1550nm InGaAsP strained MQW 1.25Gbps DFB LD TO CAN
|
KODENSHI KOREA CORP.
|
| NX5522 NX5522EH NX5522EK |
1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE
|
California Eastern Labs
|
| ML99213 ML9XX13 |
Optoelectronics - Discontinued Products
InGaAsP - MQW - DFB LASER DIODES
In GaAsP-MQW-DFB LASER DIODES
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| NX5330SA NX5330SA-AZ |
1 310 nm InGaAsP MQW-FP LASER DIODE FOR OTDR APPLICATIONS
|
California Eastern Labs
|
| NX8510UD NX8510UD-AZ |
NECs InGaAsP MQW-DFB TOSA FOR 2.5 Gb/s CWDM APPLICATIONS
|
California Eastern Laboratories
|
